 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 4 - JANUARY 1998 PIN CONFIGURATION 1 FMMV105G 2 1 PARTMARKING DETAILS FMMV105G - 4EZ 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL P tot T j:T stg VALUE 330 -55 to +150 UNIT mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Reverse Breakdown Voltage Reverse current Series Inductance Diode Capacitance Temperature Coefficient SYMBOL V BR MIN. 30 TYP. MAX. UNIT V CONDITIONS. I R = 10A V R = 28V f=250MHz IR LS T CC 3.0 280 10 nA nH ppm/ C V R = 3V, f=1MHz TUNING CHARACTERISTICS (at Tamb = 25C). PARAMETER Diode Capacitance Capacitance Ratio Figure of MERIT SYMBOL Cd Cd / Cd Q MIN. 1.8 4.0 250 350 TYP. MAX. 2.8 6.0 UNIT pF CONDITIONS. V R = 25V, f=1MHz V R = 3V/25V, f=1MHz V R = 3V, f=50MHz Spice parameter data is available upon request for this device |
Price & Availability of FMMV105G
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |